This book focuses on the Si micro-fabrication technology. Since the invention of integrated circuits (IC) in 1958, the Si micro-fabrication technology has been developing rapidly thanks to the advances in modern physics and other fundamental sciences from the beginning of the 20th century. Fully understanding the scientific principles underlying the various micro-fabrication technologies is the basis for studying and mastering the Si IC chip process technology.
This book consists of 20 chapters. The first 8 chapters outline the evolution and innovation of the CMOS and bipolar IC process technology over the past six decades, analyze the unique law of Si IC micro-fabrication technology evolution, discuss the relationship between the scaling-down principle and the Moore’s Law, and review the basic theories of semiconductor physics and transistors. The following 12 chapters elaborate on such key process technologies of Si IC chips as thermal oxidation, Si epitaxial growth and SOI material, lithography, dopant diffusion, ion implant and RTA, PVD/CVD/ALD thin films, high density plasma etching, salicide contact and multi-level interconnection. The physical and chemical principles underlying the micro-fabrication technology are analyzed and discussed for better understanding. Besides, more attention is paid to the fabrication technology of nano-CMOS chips with new structures and materials.
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